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Keymash is a tool for emulating a keyboard layout and quickly converting files from one layout to another. Keymash can convert a file from one layout to another and vice versa, or create a new file using a different layout.
Keymash supports character sets including Latin, Greek, Cyrillic, Hebrew and Arabic. It can be used with multiple layouts at the same time, and allows you to set a custom modifier key.
Keymash can convert files to any layout using command line options and drag-and-drop. It allows you to specify a layout with a name and set a modifier key. It’s also possible to use a variable length modifier key, which is set to the length of a space character.
Keymash can save a file’s layout when it creates a new file. You can specify a layout to use in the file name, so that you don’t have to use command line options.
Keymash comes with an English, German, Italian, French, Spanish, Portuguese, Romanian, Russian, Polish, Czech, Swedish and Finnish translation.
Keymash can switch between a keyboard layout for files or for any type of program.
Keymash has command line and menus. In addition to keyboard shortcuts, it allows you to use the most common keybindings for commonly used functions.
Keymash has a hierarchical color scheme. It can be changed with two settings, “dungeon” and “standard”. Dungeon is the default and is dark red, while standard is a light red.
Keymash has a dark night theme and can be used with some window managers.
Keymash is based on an interface provided by the linux program ReText.
Keymash is freeware.
Keymash is cross-platform.
Keymash is available in English, German, Italian, French, Spanish, Portuguese, Romanian, Russian, Polish, Czech, Swedish and Finnish.

Description:
VueScan is a simple scanner for scanning photos and documents.
It can read any digital format (DNG, JPG, JPEG, TIFF, GIF, PNG, PDF, PSD) and can scan whole pages of documents or photos at once.
VueScan can even take snapshots of parts of a picture to automatically crop them to a fixed size. It can scan from the memory card, direct from a USB flash drive or from the SD/SDHC/SDXC memory card slot of your computer d82f892c90

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Pretty Good Terminal is an advanced software solution designed to help you create the script code necessary to configure hundreds or thousands of devices in the network. Comes with a clean and straightforward interface, it provides you with an easy access to multiple panels that can be accessed at the same time. It supports Python scripting as well as debugging for Visual Scripts and YDK-Base vScript templates. You can also take advantage of the Python interactive function to generate and execute CLI scripts that can collect information and hence, configure devices more efficiently. A noteworthy function is the Visual Script Editor that enables you to design, implement and debug complex scripts even if you do not have an extensive programming knowledge.

Vazir.World has been providing software solution support to different software vendors to solve their problems like, helpdesk services, web-hosting, hosting and VPS as well as many other server-related things. In addition, Vazir.World also provides Free Open Source CMS VPS and Domain Name Registration Service.1. Field of the Invention
The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of forming a pattern of an upper gate electrode in a transistor in a semiconductor device.
2. Discussion of the Related Art
Generally, a semiconductor device comprises a plurality of unit cells and a plurality of field effect transistors (hereinafter, referred to as ‘FETs’) that are formed in and over the unit cells. Among these, FETs formed in and over a memory cell have a selection transistor (hereinafter, referred to as a ‘select transistor’) that controls the path of data stored in the cell.
FIG. 1 illustrates a plan view of the structure of a unit cell and its select transistor in a conventional semiconductor device, and FIG. 2 illustrates a cross-sectional view taken along a line II-II′ of FIG. 1.
Referring to FIG. 1 and FIG. 2, a field oxide film (not shown) formed by a shallow trench isolation (hereinafter, referred to as an ‘STI’) method is formed on a silicon substrate 11. An active region (not shown) is defined by the field oxide film, and a gate insulating film 12 and a first gate electrode 13 of a selection transistor and a second gate electrode 14 of a storage node capacitor are formed in and over the active region.
The first gate electrode 13 is formed as an upper

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